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A first-principles study on edge doping of armchair graphene nanoribbon

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2 Author(s)
Kai Tak Lam ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Liang, Gengchiau

We present our ab initio calculations on the edge-doping effects of graphene nanoribbon (GNR) with hydrogen passivated armchair edges. Boron [nitrogen] atoms are introduced to the GNR by substituting carbon atoms at the edges. Initial introduction of boron [nitrogen] atom decreases [increases] the Fermi level of the armchair GNR (AGNR), creating a p-type [n-type] semiconductor. Higher concentration of boron [nitrogen] atoms further decreases [increases] the Fermi level. Based on these observation, a p-i-n AGNR heterstructure is simulated and the transmission coefficient and current-voltage characteristic are also calculated.

Published in:

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Date of Conference:

24-27 March 2008