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Self-organized pattern formation by ion beam erosion

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3 Author(s)
Rauschenbach, B. ; Leibniz-Inst. fur Oberflachenmodifizierung, Leipzig ; Ziberi, B. ; Frost, F.

The dot and ripple surface topography emerging on Si, Ge and compound semiconductor surfaces during low-energy (les2000 eV) noble gas ion beam erosion at oblique ion incidence is studied. The results show that there is a much more complex behavior of the surface topography with ion energy, ion fluence, angle of incidence, etc.

Published in:

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Date of Conference:

24-27 March 2008

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