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Dual channel current-source gate drivers for high-frequency dc-dc converters

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3 Author(s)
Yan-Fei Liu ; Sch. of Electr. Eng.&Inf., Anhui Univ. of Technol., Maanshan ; Lusheng Ge ; Shicheng Zheng

In this paper, resonant gate driver techniques for power MOSFETs are reviewed at first. To solve the exiting problems of the drive circuits previously proposed, new dual channel current-source gate drivers are presented here. The new drive circuits can achieve quick turn-on and turn-off transition time to reduce the switching loss of power MOSFETs significantly by constant gate drive currents due to the parasitic inductance, especially the common source inductance. A 12 V synchronous buck VR prototype at 1 MHz switching frequency was built to demonstrate the advantages of the new drive circuits. A significant efficiency improvement over the conventional gate voltage driver is achieved.

Published in:

Industrial Electronics and Applications, 2008. ICIEA 2008. 3rd IEEE Conference on

Date of Conference:

3-5 June 2008