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In this paper, resonant gate driver techniques for power MOSFETs are reviewed at first. To solve the exiting problems of the drive circuits previously proposed, new dual channel current-source gate drivers are presented here. The new drive circuits can achieve quick turn-on and turn-off transition time to reduce the switching loss of power MOSFETs significantly by constant gate drive currents due to the parasitic inductance, especially the common source inductance. A 12 V synchronous buck VR prototype at 1 MHz switching frequency was built to demonstrate the advantages of the new drive circuits. A significant efficiency improvement over the conventional gate voltage driver is achieved.