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We report on the development of InAs/InGaAlAs quantum-dash-in-well structure on InP substrate for wideband emitter applications. A spectral width as broad as 58 meV observed from both photoluminescence and surface photovoltage spectroscopy on the sample indicating the formation of highly inhomogeneous InAs-dash structure that results from the quasi-continuous interband transition. The two-section superluminescent diodes (SLDs), with integrated photon absorber slab as lasing suppression section, fabricated on the InAs dash-in-well structure exhibits the close-to-Gaussian emission with a bandwidth (full-width at half-maximum) of up to 140 nm at ~ 1.6 mum peak wavelength. The SLD produces a low spectrum ripple of 0.3 dB and an integrated power of ~ 2 mW measured at 20degC under 8 kA/cm2. The oxide stripe laser exhibits wide lasing wavelength coverage of up to 76 nm at ~ 1.64 mum center wavelength and an output optical power of ~ 400 mW from simultaneous multiple confined states lasing at room temperature. This rule changing broadband lasing signature, different from the conventional interband diode laser, is achieved from the quasi-continuous interband transition formed by the inhomogeneous quantum-dash nanostructure.