By Topic

Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ducanchez, A. ; Inst. Electron. du Sud (IES), Montpellier 2 Univ., Montpellier ; Cerutti, L. ; Gassenq, A. ; Grech, P.
more authors

In this paper, the process of fabrication of GaSb-based electrically injected resonant-cavity LEDs near 2.3 mum is detailed. The electrical and optical properties of these diodes operating in continuous wave at room temperature are also presented. The different tested monolithic structures have similar designs with two doped AlAsSb/GaSb Bragg mirrors and an active region with eight GaInAsSb quantum wells. Performances of devices containing or not an n++-InAsSb/p++-GaSb tunnel junction (TJ) can be compared. The large improvements of electrical resistance as well as output power, observed when a TJ is included, demonstrate all the advantages to use such a technology for the realization of electrically injected vertical cavity structures emitting in the mid-IR on GaSb substrate.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:14 ,  Issue: 4 )