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A growth technique for wide emission wavelength quantum dots (QDs) via the Stranski-Krastanov (S-K) growth mode using a double-cap procedure and metal-organic vapor phase epitaxy (MOVPE) selective area growth is proposed. By using the double-cap procedure, we have improved the uniformity of the QDs height. Selective area growth by low-pressure MOVPE using a SiO2 narrow stripe mask array pattern was carried for controlling and widening the emission wavelength range of the QDs in 16 stripe mask array waveguides. We have successfully demonstrated QD characteristics under various growth conditions, and have realized 120 nm emission wavelength range in 16 array, five layer InAs QD waveguides.