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A Monte Carlo model for ion implantation in crystalline SiC is developed, which can be applied to arbitrary polytypes, including but not limited to 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, and 15R-SiC. It is shown that with optimized parameters, a semiempirical electronic stopping power model is effective in simulating the dopant profiles in both channeling and random direction implants, despite its highly anisotropic crystal structure of SiC. The effect of polytypism on the dopant profiles is also shown. The simulated dopant profiles are compared with the experimental SIMS profiles in 4H-SiC and 6H-SiC, and good agreement is obtained in both cases. Finally, the predicted dopant profiles in 15R-SiC are explored for the first time.