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Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs

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4 Author(s)
Tamaki, T. ; Renesas Technol. Corp., Takasaki ; Walden, G.G. ; Yang Sui ; Cooper, J.A.

The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunch-through buffer layer is found to be the major factor determining switching loss.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 8 )

Date of Publication:

Aug. 2008

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