Cart (Loading....) | Create Account
Close category search window
 

1.88- \hbox {m}\Omega \cdot\hbox {cm}^{2} 1650-V Normally on 4H-SiC TI-VJFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yuzhu Li ; Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ ; Alexandrov, P. ; Zhao, J.H.

The SiC trenched-and-implanted vertical junction field-effect transistor (TI-VJFET) is an excellent device for power switching applications, but its on-resistance needs to be further reduced to suppress ON-state power loss. In this paper, we used small cell pitch size and high channel/drift layer doping concentration to achieve low on-resistance. Advanced fabrication processes, such as Bosch process trench etching, self-aligned Ni silicide, and self-aligned gate overlay were implemented to support such an aggressive design. Normally on 4H-SiC TI-VJFETs of various channel-opening dimensions have been designed and fabricated based on a 12 mum, 1.8 times 1016 cm-3 doped drift layer. Record high performance TI-VJFETs have been achieved and will be reported. Other SiC VJFET structures under active research are reviewed and compared to TI-VJFET. Without the need for epi-regrowth or stringent lithography alignment, TI-VJFET has the advantage of a less demanding fabrication process. In addition, its high current density, adjustable channel width and low gate resistance make TI-VJFET an excellent device for fast power switching applications.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 8 )

Date of Publication:

Aug. 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.