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Demonstration and Characterization of Bipolar Monolithic Integrated Circuits in 4H-SiC

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3 Author(s)
Jeong-Youb Lee ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN ; Singh, S. ; Cooper, J.A.

A monolithic bipolar integrated circuit technology employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC for the first time. Operating on a 15-V power supply, as required by the higher base-emitter voltage of SiC bipolar transistors, TTL inverters with a fan-out of ten exhibit high-level noise margin (NMH) of 1.5 V and low-level noise margin (NML,) of 3.9 V at room temperature. The transient response of the fabricated SiC TTL gates is also characterized. The circuits operate satisfactorily from room temperature to above 300degC, suggesting that SiC bipolar integrated circuits are promising candidates for high-temperature applications.

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Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 8 )