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Uncertainty Analysis of Two-Step and Three-Step Methods for Deembedding On-Wafer RF Transistor Measurements

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3 Author(s)
Junyoung Cha ; Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin ; Jiyong Cha ; Seonghearn Lee

In order to investigate the deembedding uncertainties in the most commonly used deembedding methods, fmax and fT deembedded from two- and three-step ones are compared with those of an accurate pad-open-short technique requiring an additional pad open pattern. The lower fmax and higher fT values from these deembedding methods than those of the pad-open-short technique considering the distributed effect are obtained in an actual MOSFET with Lg = 0.13 mum. The deembedding uncertainty of two- and three-step methods is reduced without the pad open pattern by a simple deembedding technique using extrinsic and intrinsic admittances in specific splitting fractions.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 8 )