Referenced Items are not available for this document.
In order to investigate the deembedding uncertainties in the most commonly used deembedding methods, fmax and fT deembedded from two- and three-step ones are compared with those of an accurate pad-open-short technique requiring an additional pad open pattern. The lower fmax and higher fT values from these deembedding methods than those of the pad-open-short technique considering the distributed effect are obtained in an actual MOSFET with Lg = 0.13 mum. The deembedding uncertainty of two- and three-step methods is reduced without the pad open pattern by a simple deembedding technique using extrinsic and intrinsic admittances in specific splitting fractions.
Published in:
Electron Devices, IEEE Transactions on
(Volume:55
,
Issue:
8
)
Date of Publication: Aug. 2008
- Page(s):
- 2195 - 2201
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 10177180
- Digital Object Identifier :
- 10.1109/TED.2008.926752
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 25 July 2008
- Issue Date :
- Aug. 2008
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
