By Topic

Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in \hbox {p}^{+} - \hbox {n}^{-} - \hbox {n}^{+} Diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Baburske, R. ; Dept. of Electr. Eng. & Inf. Technol., Chemnitz Univ. of Technol., Chemnitz ; Heinze, B. ; Lutz, J. ; Niedernostheide, F.

This brief describes the influence of switching conditions and a dynamic avalanche on the extraction of the charge-carrier plasma during the reverse-recovery period of p+-n--n+ diodes. The influence of the drift components and the diffusion components of the electron- and hole-current densities on the evolution of the plasma layer was investigated. The analysis shows that diffusion currents influence the plasma extraction process and can induce a change in the direction of the particle flux. Such a change in the particle flux may result in a longitudinal displacement of the plasma layer and significantly modify the reverse-recovery behavior. The results explain how a low on -state current density, a high circuit inductance, and the appearance of a dynamic avalanche will modify the reverse-recovery behavior.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 8 )