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Analytical Threshold Voltage Model for Double-Gate MOSFETs With Localized Charges

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3 Author(s)
Hongki Kang ; Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon ; Jin-Woo Han ; Choi, Yang-Kyu

An analytical threshold voltage model for double-gate MOSFETs with localized charges is developed. From the 2-D Poisson's equation with parabolic potential approximation, a compact threshold voltage model is derived. The proposed model is then verified with a 2-D device simulator. The model can be used to investigate hot-carrier-induced device degradation for various device dimensions and various charge distributions.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 8 )