We integrated into GaN LEDs both two-dimensional photonic crystal patterns and angled sidewall deflectors. The resultant devices exhibited about three-fold enhancement in vertical emission intensity when compared with the planar reference LED device.
Published in:
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Date of Conference: 4-9 May 2008