By Topic

InGaN light emitters: A comparison of quantum dot and quantum well based devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yuh-Renn Wu ; Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, 106, Taiwan ; Yih-Yin Lin ; Jasprit Singh

In this paper, we have studied the band structure of InGaN based quantum dot devices. The valence force field model and k middot p method have been applied to study the band structures in InGaN quantum dot devices including the piezoelectric polarization effects. A comparison with InGaN quantum wells shows that InGaN quantum dots can provide better e-h overlap and reduce the radiative lifetime. The dot size and the relation to the effective bandgap have been studied in this paper. The results suggest that InGaN quantum dots would have superior performance in white light emitters.

Published in:

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Date of Conference:

4-9 May 2008