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In this paper, we have studied the band structure of InGaN based quantum dot devices. The valence force field model and k middot p method have been applied to study the band structures in InGaN quantum dot devices including the piezoelectric polarization effects. A comparison with InGaN quantum wells shows that InGaN quantum dots can provide better e-h overlap and reduce the radiative lifetime. The dot size and the relation to the effective bandgap have been studied in this paper. The results suggest that InGaN quantum dots would have superior performance in white light emitters.