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The effect of injection barrier thickness and doping level on a λ ∼ 8 μm quantum cascade structure

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5 Author(s)
Howard, S.S. ; Dept. of Electr. Eng., Princeton Univ., Princeton, NJ ; Howard, D.P. ; Ko, T. ; Sivco, Deborah L.
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For a high-performance quantum cascade laser structure, a 50% reduction in doping level and 33% reduction in injection barrier thickness yields 5 times stronger luminescence, 20% smaller optical transition width, and improved current-voltage characteristics.

Published in:

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Date of Conference:

4-9 May 2008