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Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser

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7 Author(s)
Hoogland, S. ; Dept of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON ; Garnache, A. ; Wilcox, K.G. ; Mihoubi, Z.
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Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.

Published in:

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Date of Conference:

4-9 May 2008

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