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Detection of process-dependent changes in the Hf(in1−x)SixO2/Si (100) barrier heights by second harmonic generation

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3 Author(s)
Price, J. ; Dept. of Phys., Univ. of Texas at Austin, Austin, TX ; An, Y.Q. ; Downer, M.C.

We measure barrier heights of silicon/high-k dielectric structures, and their changes with processing, by identifying a photon-energy-dependent threshold for internal hole photoemission using spectroscopic time-dependent second-harmonic generation.

Published in:

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Date of Conference:

4-9 May 2008