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Material properties in Si-Ge/Ge quantum wells for silicon-integrated electro-absorption devices

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5 Author(s)
Rebecca K. Schaevitz ; Edward L. Ginzton Laboratory, Box N-124, Stanford University, CA 94305-4088, USA ; Jonathan E. Roth ; Shen Ren ; Onur Fidaner
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The quantum-confined Stark effect demonstrated in Si-Ge/Ge quantum wells promises integration of optics with silicon ICs. Using photocurrent, tunneling resonance and nonparabolicity, we propose more accurate values of key parameters for device design.

Published in:

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Date of Conference:

4-9 May 2008