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Revealing subsurface defects in semiconductors using near-field fluorescence lifetime imaging

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2 Author(s)
Bender, D.A. ; Opt. Sci. & Eng. Program, Univ. of New Mexico, Albuquerque, NM ; Sheik-Bahae, M.

Simultaneous near-field fluorescence lifetime imaging and atomic force microscopy identify radiative, interface and subsurface defect recombination sites in GaAs/GaInP heterostructures. Such unique characterization plays a significant role in identifying candidate samples for laser cooling.

Published in:

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Date of Conference:

4-9 May 2008

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