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Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability

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5 Author(s)
Millar, C. ; Dept. of Electron. & Electr. Eng., Glasgow Univ., Glasgow ; Reid, D. ; Roy, G. ; Roy, S.
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We have studied the detailed threshold voltage distribution in a state-of-the-art n-channel MOSFET in the presence of random discrete dopants. A ground-breaking sample of 100 000 transistors with statistically unique random dopant distributions were simulated using the Glasgow 3-D device simulator and advanced grid computing technologies. The results indicate that the threshold voltage distribution deviates substantially from a Gaussian distribution, which may have significant implications for the margins used in circuit design, particularly in SRAM cells.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 8 )