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A Novel 2-Bit/Cell p-Channel Logic Programmable Cell With Pure 90-nm CMOS Technology

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8 Author(s)
Ying-Je Chen ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu ; Chia-En Huang ; Hsin-Ming Chen ; Han-Chao Lai
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A new p-channel nitride-based one-time programmable (OTP) memory was developed for advanced-logic nonvolatile-memory (NVM) applications. A 0.296-mum2/bit (~35 F2) OTP cell, i.e., 0.592 mum2/cell, with a self-aligned nitride storage node was fabricated using standard 90-nm CMOS processes and is fully independent of gate oxide for high scalability. Additionally, the ultrahigh-density OTP cell exhibits excellent retention, immunity against disturbance, and a wide on/off window under the band-to-band hot electron programming. In summary, the new p-channel OTP cell is a very promising solution for use in high-density logic NVM applications beyond the 90-nm technology node.

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IEEE Electron Device Letters  (Volume:29 ,  Issue: 8 )