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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:29 Issue:8 Help

A New Embedded One-Time-Programmable MNOS Memory Fully Compatible to LTPS Fabrication for System-on-Panel (SOP) Applications

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6 Author(s)
Te-Yu Lee ; Instn. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu ; Chih-Chieh Chiu ; Yu-Chung Liu ; Chih-Chung Liu
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A metal-nitride-oxide-silicon (MNOS) one-time-programmable cell with fast programming, high reliability, and fully low-temperature polycrystalline-silicon (LTPS) panel compatible process has been proposed for system-on-panel applications. This cell adopting tunneling programming scheme has a very wide reading window with superior program efficiency. Furthermore, fast program efficiency and high disturb immunity are both obtained in the LTPS panel technology by a divided voltage operation. Through channel FN programming, superior data retention and low-power operation are therefore achieved. The new embedded MNOS cell has provided a promising one-time-programming memory solution on the LTPS panels' applications.

Published in:
Electron Device Letters, IEEE  (Volume:29 ,  Issue: 8 )

Date of Publication: Aug. 2008

Page(s):
906 - 908
ISSN :
0741-3106
INSPEC Accession Number:
10118013
Digital Object Identifier :
10.1109/LED.2008.2000831
Product Type:
Journals & Magazines
Date of Current Version :
22 July 2008
Issue Date :
Aug. 2008
Sponsored by :
IEEE Electron Devices Society

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