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Dynamic Turn-On Mechanism of the n-MOSFET Under High-Current Stress

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4 Author(s)
Dao-Hong Yang ; Dept. of Electr. Eng, Nat. Cheng Kung Univ., Tainan ; Jone F. Chen ; Jian-Hsing Lee ; Kuo-Ming Wu

In this letter, the dynamic turn-on mechanism of the n-MOSFET under high-current-stress event is investigated by using a real-time current and voltage measurement. Results reveal the existence of ldquoself-consistent effect,rdquo i.e., the turn-on region of the parasitic n-p-n bipolar can change from one region to another region and increases with the stress current (ID). Furthermore, experimental data show that the minimum substrate potential to sustain a stable snapback phenomenon is 0.9 V and increases with ID instead of 0.6-0.8 V and independent of ID as reported in early literatures.

Published in:

IEEE Electron Device Letters  (Volume:29 ,  Issue: 8 )