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Bottom–Up-Fabricated Oxide–Metal–Semiconductor Spin-Valve Transistor

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4 Author(s)
Lai Zhao ; Univ. of Delaware, Newark, DE ; Biqin Huang ; Olowolafe, O. ; Appelbaum, Ian

Spin-valve transistors (SVTs) employing hot-electron transport through ferromagnetic multilayers have large magnetocurrent (MC), making them a promising magnetic field sensor. However, the assembly technique required for fabricating the necessary semiconductor-metal-semiconductor structure limits their use. We have circumvented this problem with an alternative fabrication technique and show a greater than 300% MC change in SVT devices employing a sputter-deposited zinc oxide (ZnO) semiconductor emitter as hot-electron injector. The compatibility of this process to standard fabrication techniques makes it possible to integrate the SVT into present-day industrial technology.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 8 )