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Reliable Organic Nonvolatile Memory Device Using a Polyfluorene-Derivative Single-Layer Film

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7 Author(s)
Kim, Tae-Wook ; Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju ; Oh, Seung-Hwan ; Hyejung Choi ; Wang, Gunuk
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This letter describes the reversible switching performance of metal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ~ 104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 degC, and an excellent device-to-device switching uniformity.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 8 )

Date of Publication:

Aug. 2008

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