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Low-Frequency Noise Characteristics in Ion-Implanted GaN-Based HEMTs

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4 Author(s)
Nakajima, M. ; Fac. of Eng., Hosei Univ., Koganei ; Ohsawa, T. ; Nomoto, K. ; Nakamura, T.

Low-frequency noise characteristics in ion-implanted GaN/AlGaN/GaN and AlGaN/GaN HEMTs were investigated. The normalized spectral noise density was about 6 dB lower in GaN/AlGaN/GaN HEMTs than in AlGaN/GaN HEMTs. The normalized spectral noise density dependence on the gate length Lg indicates that the main origin of low-frequency noise is at the region under the gate in both devices. The Hooge parameters alphaH for both devices are on the order of 10-1-10- 2. The ion implantation process introduces a lot of defects in the source/drain regions, but the values of alphaH are comparable with those for conventional GaN-based HEMT devices. The values of alphaH are also lower in GaN/AlGaN/GaN HEMTs than in AlGaN/GaN HEMTs, which is due to the decrease of surface potential fluctuations in GaN/AlGaN/GaN HEMTs.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 8 )