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GaN Device Technology: Manufacturing, Characterization, Modelling and Verification

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12 Author(s)
Ciccognani, W. ; Dipt. di Ing. Elettron., Univ. di Roma ''Tor Vergata'', Rome ; Giannini, F. ; Limit, E. ; Longhi, P.E.
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Gallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and verification of different families of high efficiency, high- power devices manufactured at SELEX Sistemi Integrati are reported. Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena.

Published in:

Microwave Techniques, 2008. COMITE 2008. 14th Conference on

Date of Conference:

23-24 April 2008

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