Referenced Items are not available for this document.
The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performance: they exhibit 1 dB on-state insertion loss and better than 37 dB isolation. Power- handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.
Published in:
Electronics Letters
(Volume:44
,
Issue:
15
)
Date of Publication: July 17 2008
- Page(s):
- 911 - 912
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 10075463
- Digital Object Identifier :
- 10.1049/el:20081170
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 July 2008
- Issue Date :
- July 17 2008
- Sponsored by :
- Institution of Engineering and Technology
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