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The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performance: they exhibit 1 dB on-state insertion loss and better than 37 dB isolation. Power- handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.
Date of Publication: July 17 2008