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High-power monolithic AlGaN/GaN HEMT switch for X-band applications

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6 Author(s)
W. Ciccognani ; Dept. of Electron. Eng., Univ. di Roma Tor Vergata, Rome ; M. De Dominicis ; M. Ferrari ; E. Limiti
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The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performance: they exhibit 1 dB on-state insertion loss and better than 37 dB isolation. Power- handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.

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Electronics Letters  (Volume:44 ,  Issue: 15 )