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High-Voltage-Gain CMOS LNA For 6–8.5-GHz UWB Receivers

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5 Author(s)
Battista, M. ; IM2NP, Aix-Marseille Univ., Marseille ; Gaubert, J. ; Egels, M. ; Bourdel, S.
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The design of a fully integrated CMOS low noise amplifiers (LNA) for ultra-wide-band (UWB) integrated receivers is presented. An original LC input matching cell architecture enables fractional bandwidths of about 25%, with practical values, that match the new ECC 6-8.5-GHz UWB frequency band. An associated design method which allows low noise figure and high voltage gain is also presented. Measurements results on an LNA prototype fabricated in a 0.13-mum standard CMOS process show average voltage gain and noise figure of 29.5 and 4.5 dB, respectively.

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Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:55 ,  Issue: 8 )