Referenced Items are not available for this document.
While the potential of FinFETs for large-scale integration (LSI) was demonstrated before on relaxed device dimensions, in this paper we present performance data of aggressively scaled transistors, ring oscillators and SRAM cells. FinFET SRAMs are shown to have excellent VDD scalability (SNM=185 mV at 0.6 V), enabling sub-32 nm low-voltage design.
Published in:
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Date of Conference: 2-4 June 2008
- Page(s):
- 59 - 62
- E-ISBN :
- 978-1-4244-1811-4
- Print ISBN:
- 978-1-4244-1810-7
- INSPEC Accession Number:
- 10076402
- Conference Location :
- Austin, TX
- Digital Object Identifier :
- 10.1109/ICICDT.2008.4567246
- Product Type:
- Conference Publications
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