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Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length

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19 Author(s)

While the potential of FinFETs for large-scale integration (LSI) was demonstrated before on relaxed device dimensions, in this paper we present performance data of aggressively scaled transistors, ring oscillators and SRAM cells. FinFET SRAMs are shown to have excellent VDD scalability (SNM=185 mV at 0.6 V), enabling sub-32 nm low-voltage design.

Published in:

Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on

Date of Conference:

2-4 June 2008