Cart (Loading....) | Create Account
Close category search window
 

SRAM memory cell leakage reduction design techniques in 65nm low power PD-SOI CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Thomas, O. ; CEA/LETI, Minatec, Grenoble ; Belleville, M. ; Ferrant, R.

The paper presents a detailed study on the idle leakage reduction techniques on partially depleted silicon-on-insulator (PD-SOI) CMOS SRAM. The most promising leakage reduction techniques that have been proposed are introduced, analyzed and compared into 65 nm low-power PD-SOI technology, taking into account all the SOI specific effect. Especially, it is shown that the leakage reduction techniques change the strength of individual cell transistor, thus modifying the cell stability during the first read access following a long period of idle mode. The conclusions of the paper show that letting the bit lines float during the idle mode is mandatory to diminish the cell leakage current and help to protect the cell content against the bit-line aggressions.

Published in:

Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on

Date of Conference:

2-4 June 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.