Magnetic properties and structure of FeN/AlN multilayered films deposited by r.f. magnetron sputtering were studied. Hc decreased as the ratio of FeN to AlN layer thickness became small. Hc also decreased with decreasing film thickness of FeN/AlN bilayers. Hc and 4Â¿Ms in a 22Ã
multilayered film were 1 Oe and 8.5 kG, respectively. The film had high permeability, Â¿', 800 at 5 MHz and 650 even at 100 MHz because of high resistivity. SEM observation and Â¿-AES analysis revealed the film had a layered structure. X-ray diffraction made it clear that high permeability was ascribed to fine grains and smaller lattice mismatch between layers compared to thick layered films.