By Topic

Stress Induced Magnetic Anisotropy of YBi2Fe5-xGaxO12 Sputtered Films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kigami, Y. ; Tokyo Institute of Technology. ; Namikawa, T. ; Yamazaki, Y.

In order to study the origin of perpendicular magnetic anisotropy in Bi-substituted iron garnet thin films, a series of samples with composition YBi2Fe5-xGaxO12 (0.36/≪x/≪0.97) was prepared by rf sputtering onto several substrates with various thermal expansion coefficients. The stress (¿) was calculated from the difference in thermal expansion of the film and substrate. The anisotropy constant (Ku) of the films increased linearly with ¿ in the range from ¿ = ¿9.0×109 erg/cm3 to 3.0×109 erg/cm3. The Ku decreased linearly with x in the composition range studied. The experimental results are discussed and compared with results for Al-substituted films.

Published in:

Magnetics in Japan, IEEE Translation Journal on  (Volume:5 ,  Issue: 4 )