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Magnetoresistive Effect in Transition Region of PN Junction and Its Application Circuits

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1 Author(s)
Ishibashi, S. ; Tokyo Engineering Univ.

Magnetic effects in semiconductor devices have so far been utilized primarily in bulk materials. In this paper, a device is proposed in which a magnetic effect in a junction region is utilized. Also proposed is a circuit that may be used to detect differences in magnetic effects as a voltage. This detection circuit is directly connected to a dc amplifier or an astable multivibrator, the output of which can be used to determine magnetic field strengths. The application of IC technology may enable replacement of conventional switches, such as digital switches, with the present device. The same concept can also be applied to drive switching circuits, such as counter circuits, by using a controlling magnetic field.

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Magnetics in Japan, IEEE Translation Journal on  (Volume:3 ,  Issue: 3 )