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Silicon oxide (SiO2) hemispherical microlens with the density of 8.2 times 108 cm-2 has been formed on a sapphire substrate of gallium nitride (GaN) light-emitting diode (LED) by liquid phase deposition to enhance the light extraction efficiency. For flip-chip LED, the SiO2 microlens exhibits 1.25 times enhancement of optical output power. In comparison of the conventional LED, there is 61% enhancement for flip-chip LED with a SiO2 microlens.
Date of Publication: Aug.1, 2008