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Design of power amplifiers using high breakdown GaN HEMT devices

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3 Author(s)
Shumaker, J. ; Eudyna Devices USA Inc., San Jose, CA ; Ohoka, M. ; Ui, N.

Some applications of the new GaN HEMT technology have been demonstrated. Class AB allows either very wide bandwidth or very high power. Doherty produces very good efficiency that is correctable for acceptable linearity at high efficiency.

Published in:

Microwaves, Communications, Antennas and Electronic Systems, 2008. COMCAS 2008. IEEE International Conference on

Date of Conference:

13-14 May 2008

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