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Quantum-tailored solid-state devices

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3 Author(s)
Drummond, T.J. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Gourley, P.L. ; Zipperian, T.E.

Techniques that allow semiconductor crystals to be grown on one layer at a time are described, and the potential they offer for tailoring device characteristics precisely by controlling the band gap is discussed. Three tools used to accomplish this are examined: alloying, which changes a semiconductor's chemical composition; the juxtaposition of heterogeneous materials to form heterojunctions; and the introduction of mechanical strain between crystal layers. Band-gap engineering of optical devices is given particular attention.<>

Published in:

Spectrum, IEEE  (Volume:25 ,  Issue: 6 )

Date of Publication:

June 1988

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