Cart (Loading....) | Create Account
Close category search window
 

Quantum-tailored solid-state devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Drummond, T.J. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Gourley, P.L. ; Zipperian, T.E.

Techniques that allow semiconductor crystals to be grown on one layer at a time are described, and the potential they offer for tailoring device characteristics precisely by controlling the band gap is discussed. Three tools used to accomplish this are examined: alloying, which changes a semiconductor's chemical composition; the juxtaposition of heterogeneous materials to form heterojunctions; and the introduction of mechanical strain between crystal layers. Band-gap engineering of optical devices is given particular attention.<>

Published in:

Spectrum, IEEE  (Volume:25 ,  Issue: 6 )

Date of Publication:

June 1988

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.