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A fully monolithic 2times2 (2 a-band, 2 g-band) power amplifier based upon SiGe HBT process is developed for the dual band MIMO 802.11n WLAN system. In order to achieve desirable performances for the 5 GHz band and high integration level, a special through-wafer-via (TWV) process on Si wafer was developed and utilized. In this work, both a-band and g-band PAs show above 17 dBm linear power output for -28 dB EVM and more than 18 dBm for -25 dB EVM with 14% efficiency for a-band and 19% efficiency for g-band. This fully integrated PA has a total die area of 1.36 mm times 3.68 mm and is packaged in a custom designed QFN4times6 32 pin package.