By Topic

A Q-band (40–45 GHz) 16-element phased-array transmitter in 0.18-μm SiGe BiCMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kwang-Jin Koh ; ECE Dept., Univ. of California, San Diego, CA ; May, J.W. ; Rebeiz, G.M.

A 16-element phased-array transmitter based on 4-bit RF phase shifters is designed in 0.18-mum SiGe BiCMOS technology for Q-band applications. The phased-array shows 12.5plusmn1.5 dB of power gain per channel at 42.5 GHz for all phase states and the 3-dB gain bandwidth is 40-45.6 GHz. The input and output return loss is less than -10 dB at 37.5-50 GHz. The transmitter also results in les8.8deg of RMS phase error and les1.2 dB of RMS gain error for all phase states at 30-50 GHz. The maximum saturated output power is -2.5plusmn1.5 dBm per channel at 42.5 GHz. The RMS gain variation and RMS phase mismatch between all 16 channels is les0.5 dB and les4.5deg, respectively. The chip consumes 720 mA from a 5 V supply voltage and overall chip size is 2.6times3.2 mm2. To our knowledge, this is the first implementation of a 16-element phased array on a silicon chip with the RF phase shifting architecture at any frequency.

Published in:

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Date of Conference:

June 17 2008-April 17 2008