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Effect of power supply imbalance on NF of CMOS low noise amplifier for UHF RFID applications

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4 Author(s)
Kyoungchoul Koo ; Terahertz Interconnection and Package Laboratory, School. of EECS, KAIST, 373-1 Guseong, Yuseong, Daejeon 305-701, Republic of Korea ; Jongjoo Shim ; Hyunjeong Park ; Joungho Kim

In this paper, noise figure (NF) degradation of CMOS low noise amplifier (LNA) for UHF RFID application, which is caused by power/ground noise (P/G noise) from power supply imbalance is analyzed. Then, a modified NF formula to estimate the effect of P/G noise from power supply imbalance is proposed. Because the power supply imbalance is caused by package (PKG) and on-chip power/ground distribution network (PDN) structure, PKG and on-chip PDN are modeled. Also, the equivalent circuit of LNA is modeled to simulate the proposed NF formula. The proposed NF formula is verified with measurement of single-tone and clock P/G noise. It shows 50 m, 800 MHz single-tone P/G noise at PKG PWR/GND port degrades about 120 dB of NF at 800 MHz.

Published in:

Electromagnetic Compatibility and 19th International Zurich Symposium on Electromagnetic Compatibility, 2008. APEMC 2008. Asia-Pacific Symposium on

Date of Conference:

19-23 May 2008