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A CMOS common gate LNA with high linearity over UHF mobile RFID bands is presented. A common gate configuration applied to design the proposed LNA overall leads to high linearity and wide band characteristics. Proposed LNA is fabricated with 0.35 mum (one poly, four metals) CMOS manufacturing technology. The proposed LNA shows 3.2 dB noise figure, 13.4 dB voltage gain with 1.4 dBm P1 dB.
Date of Conference: 19-23 May 2008