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Integrated silicon p-i-n-structures for modulation in terahertz range with highly doped P++, N++ regions

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4 Author(s)
V. Grimalsky ; Autonomous University of Morelos (UAEM), Cuernavaca 62209, Mexico ; S. Koshevaya ; D. Chillon-E. ; J. Escobedo-A.

Modulators of terahertz (THz) range on the base of silicon integrated p-i-n-structures are investigated. The generalization of the Fletcher boundary conditions at the injecting electrodes has been put forward for the case of highly doped p++, n++ regions, where both forbidden gap narrowing and dependence of coefficients of diffusion on doping are taken into account. The problem of double injection into r-region has been simulated in a two-dimensional case. The investigations of modulation properties of integrated p-i-n-structures in THz range have demonstrated a possibility to use these structures up to the frequencies ap 8 THz.

Published in:

Microelectronics, 2008. MIEL 2008. 26th International Conference on

Date of Conference:

11-14 May 2008