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Characterization of stress-voiding of Cu / Low-k vias attached to narrow lines

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3 Author(s)
Lin, H.Y. ; TSMC9, Hsinchu ; Lee, S.C. ; Oates, A.S.

We show that the mechanism of stress voiding in Cu/low-k vias is independent of width in the range 0.07 - 0.42 squarem. The resistance change associated with voiding shows saturation with stress time, implying that stress voiding is not a fundamental concern for continued feature size scaling. Stress voiding at narrow w is very sensitive to interconnect processing, and can give unexpected, large resistance increases with annealing.

Published in:

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Date of Conference:

April 27 2008-May 1 2008