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An electrical overstress failure induced by a latch-up test is studied in high-voltage integrated cricuits. The latchup test resulted in damage to the output NMOSFET due to snapbach and also resulted in a latch-up in the internal circuits. These mechanisms are analyzed and solutions are proposed to avoid the triggering of the output NMOSFET and the resulting latchup issue.
Date of Conference: April 27 2008-May 1 2008