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Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications

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8 Author(s)

We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48 V dc stress tests and using a failure criterion of 10% reduction in Idss, the 60% confidence interval on estimate of Ea was [2.00,2.94] eV and the predicted 60% confidence interval on estimate of MTTF at Tj=200 degC was [1.0 x 106, 3.0 x 107] hours. To compare the impact of dc and RF stress, additional experiments were conducted on a smaller sample set and the results indicate that the impact of dc and RF stress is not significantly different.

Published in:

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Date of Conference:

April 27 2008-May 1 2008

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