Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications

We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48 V dc stress tests and using a failure criterion of 10% reduction in I
_dss
, the 60% confidence interval on estimate of E
_a
was [2.00,2.94] eV and the predicted 60% confidence interval on estimate of MTTF at Tj=200 degC was [1.0 x 10
⁶
, 3.0 x 10
⁷
] hours. To compare the impact of dc and RF stress, additional experiments were conducted on a smaller sample set and the results indicate that the impact of dc and RF stress is not significantly different.