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Relaxation of localized charge in trapping-based nonvolatile memory devices

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4 Author(s)
Janai, M. ; Saifun Semicond., Netanya ; Shappir, Assaf ; Bloom, I. ; Eitan, B.

Relaxation dynamics of trapped holes and trapped electrons in the ONO layer of NROM devices is studied. Hole relaxation is eight orders of magnitude faster than electron relaxation. The degradation of data retention in cycled NROM cells is interpreted in terms of dispersive transport arising from random-walk of excess holes in the disordered nitride glass.

Published in:

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Date of Conference:

April 27 2008-May 1 2008