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A Simple Lumped Port S-Parameter De-Embedding Method for On-Package-Interconnect and Packaging Component High-Frequency Modeling

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1 Author(s)
Zhaoqing Chen ; IBM Corp., Poughkeepsie, NY

The negative capacitance de-embedding method is shown to be simple, fast, and accurate for some electronic packaging component electromagnetic modeling. The lumped port gap capacitance affects the accuracy of the simulated S-parameters especially at higher frequencies. For removing this effect of the parasitic lumped port capacitance, we proposed a simple and accurate de-embedding method. By adding a negative capacitance with an absolute value of the estimated lumped port parasitic capacitance at each port of the S-parameter model, we just need to run a circuit AC simulation to generate the de-embedded S-parameters. For 3D transmission line applications like the pin area wire modeling, we developed a simple method for optimizing the negative capacitance by getting mimimum reflection from the junction of two cascaded sections in TDR simulation.

Published in:

Signal Propagation on Interconnects, 2008. SPI 2008. 12th IEEE Workshop on

Date of Conference:

12-15 May 2008