Referenced Items are not available for this document.
Electrostatic discharge (ESD) protection for high-voltage integrated circuits is challenging due to the requirement of high holding voltage to minimize the risk of ESD-induced latchup and electrical overstress. In this letter, a new silicon-controlled rectifier (SCR) is developed for this particular application. The SCR is designed based on the concept that the holding voltage can be increased by reducing the emitter injection efficiency in the SCR. This is accomplished by using a segmented emitter topology. Experimental data show that the new SCR can possess a holding voltage that is larger than 40 V and a failure current It2 that is higher than 28 mA/mum.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
7
)
Date of Publication: July 2008
- Page(s):
- 753 - 755
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10160329
- Digital Object Identifier :
- 10.1109/LED.2008.923711
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 July 2008
- Issue Date :
- July 2008
- Sponsored by :
- IEEE Electron Devices Society
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